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| 型号 | NDB5060L |
| 厂商 | Fairchild Semiconductor |
| 描述 | MOSFET N-CH 60V 26A D2PAK |
| NDB5060L PDF |  |
| 代理商 | NDB5060L |
| 标准包装 | 1 |
| FET 型 | MOSFET N 通道，金属氧化物 |
| FET 特点 | 逻辑电平门 |
| 漏极至源极电压(Vdss) | 60V |
| 电流 - 连续漏极(Id) @ 25° C | 26A |
| 开态Rds（最大）@ Id, Vgs @ 25° C | 35 毫欧 @ 13A，10V |
| Id 时的 Vgs(th)（最大） | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs | 24nC @ 5V |
| 输入电容 (Ciss) @ Vds | 840pF @ 30V |
| 功率 - 最大 | 68W |
| 安装类型 | 表面贴装 |
| 封装/外壳 | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装 | D²PAK |
| 包装 | 标准包装 |
| 其它名称 | NDB5060LDKR |
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